MMG75HE120XB6T7_W11
宏微第七代 IGBT 芯片產(chǎn)品
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特點(diǎn)
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拓?fù)鋱D
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應(yīng)用
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Parametrics
特點(diǎn)
基于第七代 IGBT 芯片技術(shù) 低 Vce(sat)
高電流密度
高可靠性
拓?fù)鋱D
應(yīng)用
輔助逆變器
電機(jī)傳動(dòng)
伺服驅(qū)動(dòng)器
Parametrics
| Type | MMG75HE120XB6T7_W11 |
| VCES (V) | 1200 |
| IC (A) | 75 |
| Technology | M7i |
| Configruation | PIM |
| Features | Flat Substrate |
| VCE (sat) (V) | 1.55 |
| RthJC (K/W) | 0.44 |
| Packages | GHE |
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